Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2010-07-02
2011-11-22
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21679
Reexamination Certificate
active
08063436
ABSTRACT:
Memory cells including a control gate, a charge trapping material, and a charge blocking material between the control gate and the charge trapping material. The charge blocking material is configured to allow for erasure of the memory cell by enhanced F-N tunneling of holes from the control gate to the charge trapping material.
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Bhattacharyya Arup
Prall Kirk D.
Tran Luan C.
Leffert Jay & Polglaze P.A.
Micro)n Technology, Inc.
Movva Amar
Smith Bradley K
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