Memory cell write

Details Memory cell write Memory cell write

2009-09-22

2011-11-01

Dinh, Son (Department: 2824)

Static information storage and retrieval

Read/write circuit

Particular write circuit

C365S230050

Reexamination Certificate

active

08050116

ABSTRACT:
Embodiments of a memory cell comprising a voltage module configured to supply a first supply voltage and a second supply voltage, a data node programming module configured to receive the first supply voltage and to program a data node based at least in part on a write data line, and a complementary data node programming module configured to receive the second supply voltage and to program a complementary data node based at least in part on a complementary write data line, wherein the voltage module is configured such that the first supply voltage is substantially different from the second supply voltage for a period of time while the memory device is being programmed. Additional variants and embodiments may also be disclosed and claimed.

REFERENCES:
patent: 5930181 (1999-07-01), Koshita

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