Memory cell with volatile and non-volatile portions having ferro

Details Memory cell with volatile and non-volatile portions having ferro Memory cell with volatile and non-volatile portions having ferro

1987-07-02

1989-02-28

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365185, 365154, 365228, G11C 1122, G11C 1124, G11C 1100, G11C 1134

Patent

active

048092258

ABSTRACT:
A memory cell includes an SRAM flip-flop cell having two nodes coupled to ferroelectric capacitors so that when the SRAM is powered down, the ferroelectric devices store data and upon power up, transfer the stored data to the SRAM cell. The ferroelectric devices can be bypassed during normal SRAM operations to reduce hysteresis fatigue.

REFERENCES:
patent: 3158842 (1964-11-01), Anderson
patent: 4144591 (1979-03-01), Brody
patent: 4300212 (1981-11-01), Simko
patent: 4499560 (1985-02-01), Brice
patent: 4630238 (1986-12-01), Arakawa
RTD Technical Documentary Report, No. RTD-TDR-63-4002, Oct. 1963, pp. 1-43, "Research on the Application of Ferro- and Ferrielectric Phenomena in Computer Devices", by Pulvari.

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