Memory cell with trigger element

Static information storage and retrieval – Systems using particular element – Semiconductive

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S148000, C365S163000, C365S175000

Reexamination Certificate

active

07619917

ABSTRACT:
A memory device includes a plurality of word lines extending as rows and bit lines extending as columns. A memory cell is coupled between a word line and a bit line, wherein the memory cell includes a unipolar memory element selectively coupled to the bit line via a trigger element.

REFERENCES:
patent: 4882706 (1989-11-01), Sinclair
patent: 5933365 (1999-08-01), Klersy et al.
patent: 6141241 (2000-10-01), Ovshinsky et al.
patent: 6625054 (2003-09-01), Lowrey et al.
patent: 6754123 (2004-06-01), Perner et al.
patent: 6813177 (2004-11-01), Lowrey et al.
patent: 6873538 (2005-03-01), Hush
patent: 6937528 (2005-08-01), Hush et al.
patent: 6954385 (2005-10-01), Casper et al.
patent: 6967865 (2005-11-01), Lee
patent: 7042760 (2006-05-01), Hwang et al.
patent: 7085154 (2006-08-01), Cho et al.
patent: 7283383 (2007-10-01), Kang
patent: 7295462 (2007-11-01), Farnworth
patent: 2006/0227591 (2006-10-01), Lowrey et al.
patent: 2006/0233019 (2006-10-01), Kostylev et al.
patent: 1 521 270 (2005-04-01), None
“Ovonic Unified Memory—A High-performance Nonvolatile Memory Technology for Stand Alone Memory and Embedded Applications”, Manzur Gill, Tyler Lowrey and John Park, ISSCC, 2002, 4 pgs.
“Highly Reliable 50nm Contact Cell Technology for 256Mb PRAM”, S.J. Ahn, Y.N. Hwang, Y.J. Song, S.Y. Lee, J.H. Park, C.W. Jeong, K.C. Ryoo, J.M. Shin, J.H. Park, Y.Fai, J.H. Oh, G.H. Koh, G.T. Jeong, S.H. Joo, S.H. Choi, Y.H. Son, J.C. Shin, Y.T. Kim, H.S. Jeong and Kinam Kim, 2005 Symposium on FLSI Technology Digest of Technical Papers, 2 pgs.
“4-Mb MOSFET-Selected Phase-Change Memory Experimental Chip”, F. Bedeschi, R. Bez, C. Boffino, E. Bonizzoni, E. Buda, G. Casagrande, L. Costa, M. Ferraro, R. Gastaldi, O. Khouri, F. Ottogalli, F. Pellizzer, A Pirovano, C. Resta, G. Torelli and M. Tosi, IEEE, 2004, pp. 207-210.
“A Fully Symmetrical Sense Amplifier for Non-Volatile Memories”, F. Bedeschi, E. Bonizzoni, O. Khouri, C. Resta and G. Torelli, IEEE, ISCAS 2004, pp. 625-628.
“Conductive bridging RAM (CBRAM): An emerging non-volatile memory technology scalable to sub 20 nm”, Michael Kund, Gerhard Beitel, Cay-Uwe Pinnow, Thomas Röhr, Jörg Schumann, Ralf Symanczyk, Klaus-Dieter Ufert and Gerhard Müller, IEEE, 2005, 4 pgs.
“Multi-layer Cross-point Binary Oxide Resistive Memory (OxRRAm) for Post-NAND Storage Application”, G.Baek, D.C. Kim, M.J. Lee, H.-J. Kim, E.K. Yim, M.S. Lee, J.E. Lee, S.E. Ahn, S. Seo, J.H. Lee, J.C. Park, Y.K. Cha, S.O. Park, H.S. Kim, I.K. Yoo, U-In Chung, J.T. Moon and B.I. Ryu, IEEE 2005, 4 pgs.
“Novell Colossal Magnetoresistive Thin Film Nonvolatile Resistance Random Access Memory (RRAM)”, W. W. Zhuang, W. Pan, B.D. Ulrich, J.J. Lee, L. Stecker, A. Burmaster, D. R. Evans, S.T. Hasu, M. Tajiri, A. Shimaoka, K. Inoue, T. Naka, N. Awaya, K. Sakiyama, Y. Wang, S.Q. Liu, N.J. Wu and A. Ignatiev, IEEE 2002, 4 pgs.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Memory cell with trigger element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory cell with trigger element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory cell with trigger element will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4126574

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.