Memory cell with proportional current self-reference sensing

Details Memory cell with proportional current self-reference sensing Memory cell with proportional current self-reference sensing

2009-03-18

2010-12-14

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S163000, C365S148000, C365S207000

Reexamination Certificate

active

07852665

ABSTRACT:
Various embodiments of the present invention are generally directed to a method and apparatus for sensing a programmed state of a memory cell, such as a spin-torque transfer random access memory (STRAM) cell. A first read current is applied to the memory cell to generate a first voltage. A second read current is subsequently applied to the memory cell to generate a second voltage, with the second read current being proportional in magnitude to the first read current. A comparison is made between the first and second voltages to determine the programmed state of the memory cell.

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