Static information storage and retrieval – Systems using particular element – Semiconductive
Patent
1976-03-25
1978-02-14
Hecker, Stuart N.
Static information storage and retrieval
Systems using particular element
Semiconductive
307238, 357 24, 365 49, G11C 700, G11C 1134
Patent
active
040742393
ABSTRACT:
In a semiconductor memory cell in which binary data is represented by the density of minority carriers stored in the inversion regions of two isolated MIS capacitors, a method of nondestructively recalling the datum stored therein is described. In this method, the minority carriers are extracted from either one or both of the inversion regions, and the resulting potential change across either one or both of the MIS capacitors is indicative of the datum stored in the memory cell. These memory cells can be used in random access memories with nondestructive recall and in content addressable memories.
REFERENCES:
patent: 3654499 (1972-04-01), Smith
patent: 3720922 (1973-03-01), Kosonocky
patent: 3914748 (1975-10-01), Barton et al.
patent: 3997799 (1976-12-01), Baker
Tiemann et al., A Surface-Charge Correlator, IEEE, Journal of Solid-State Circuits, vol. SC-9, No. 6, 12/74, pp. 403-410.
Heller et al., Random Access Potential Ramp Memory for Charge-Coupled Devices, IBM Technical Disclosure Bulletin, vol. 14, No. 2, 7/71, pp. 485-486.
Garner, State-of-Solid-State, Radio-Electronics, 8/73, pp. 56-58.
Chai et al., Charge-Coupled Device as a Nondestructive Serial-Write, Parallel-Read Device, IBM Technical Disclosure Bulletin, vol. 16, No. 12, 5/74, pp. 3870-3871.
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