Memory cell with nanocrystals or nanodots

Details Memory cell with nanocrystals or nanodots Memory cell with nanocrystals or nanodots

2006-10-10

2006-10-10

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S319000, C257S369000, C257S405000

Reexamination Certificate

active

07119395

ABSTRACT:
The storage layer (6) is in each case present above a region in which the channel region (3) adjoins a source/drain region (2) and is in each case interrupted above an intervening middle part of the channel region (3). The storage layer (6) is formed by material of the gate dielectric (4) and contains silicon or germanium nanocrystals or nanodots introduced through ion implantation. The gate electrode (5) is widened at the flanks by electrically conductive spacers (7).

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