Memory cell with increased stability

Details Memory cell with increased stability Memory cell with increased stability

1988-09-30

1990-09-11

Moffitt, James W.

Static information storage and retrieval

Systems using particular element

Flip-flop

G11C 1140

Patent

active

049568159

ABSTRACT:
A memory cell is disclosed which operates in two stable states and where an asymmetry in current through the cell is required to change the state of the cell. The cell includes a current compensating device that supplies current under ionizing radiation in a direction that is opposite to that required to write into the cell.

REFERENCES:
patent: 4638463 (1987-01-01), Rockett, Jr.
patent: 4725981 (1988-02-01), Rutledge
"DMSP Dosimetry Data: A Space Measurement and Mapping of Upset Causing Phenomena", E. G. Gussenhower et al., IEEE Trans. Nuclear Science, vol. NS-34, pp. 1251-1255 (1987).
"An SEU Tolerant Memory Cell Derived from Fundamental Studies of SEU Mechanisms in SRAM", H. T. Weaver et al., IEEE Trans. Nuclear Science, vol. NS-34, pp. 1281-1286 (1987).
"Alpha Particle Induced Soft Errors in Dynamic Memories", T. C. May et al., IEEE Trans. Electronic Devices, vol. ED-26, p. 2 (1979).
"CMOS RAM Cosmetic Ray-Induced Error Rate Analysis", J. C. Pickel et al., IEEE Trans. on Nuclear Science, vol. NS-28, pp. 3962-3967 (1981).

Affiliated with

Also associated with

Rating

Memory cell with increased stability does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory cell with increased stability, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory cell with increased stability will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1189366