Memory cell with high-K antifuse for reverse bias programming

Details Memory cell with high-K antifuse for reverse bias programming Memory cell with high-K antifuse for reverse bias programming

2005-07-01

2008-11-18

Nguyen, Viet Q (Department: 2827)

Static information storage and retrieval

Read/write circuit

Having fuse element

C365S175000, C365S115000, C365S072000

Reexamination Certificate

active

07453755

ABSTRACT:
An integrated circuit and associated method of programming are provided. Such integrated circuit includes a memory cell with a diode and an antifuse in communication with the diode. The antifuse is constructed to include a high-K dielectric material with a K greater than 3.9. Further, the memory cell is programmed utilizing a programming pulse that reverse biases the diode thereof.

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