Memory cell with fuse element

Details Memory cell with fuse element Memory cell with fuse element

2005-06-07

2005-06-07

Lam, David (Department: 2818)

Static information storage and retrieval

Read/write circuit

Having fuse element

C365S189110, C365S104000

Reexamination Certificate

active

06903993

ABSTRACT:
The present invention relates to a programmable memory device and a method of setting a state for a programmable memory device. In at least one embodiment, the memory device comprises at least a level shifter adapted to stand off a high programing voltage to at least one fuse element in the memory device, wherein the high programming voltage is used to set a state of the memory device.

REFERENCES:
patent: 6041007 (2000-03-01), Roeckner

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