Memory cell with capacitance for single event upset protection

Details Memory cell with capacitance for single event upset protection Memory cell with capacitance for single event upset protection

1988-09-07

1993-04-20

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Fet configuration adapted for use as static memory cell

With passive components,

257300, 257379, 365154, H01K 2702

Patent

active

052049906

ABSTRACT:
A compact capacitor for use in a small memory cell in high density memories is disclosed. Such a capacitor in the cross-coupling of cross-coupled inverters in the memory cell improves single event upset hardness. The subject capacitor in its preferred embodiment is a MOS capacitor with both n+ and p+ connections to the capacitor channel so as to maintain a relatively high capacitance for both positive and negative capacitor gate voltages.

REFERENCES:
patent: 4453175 (1984-06-01), Ariizumi et al.
patent: 4481524 (1984-11-01), Tsujida
patent: 4614881 (1986-09-01), Yoshida et al.
patent: 4725981 (1988-02-01), Rutledge
patent: 4745454 (1988-05-01), Erb
patent: 4827448 (1989-05-01), Kuo
patent: 4833644 (1989-05-01), Plus et al.
patent: 4912675 (1990-03-01), Blake et al.
"An Seu Tolerant Memorycell from Fundamental Studies of Seu Mechanisme In Srams"]IEEE Transactions on Nuclear Science, vol. 34, No. 6, part 1, Dec. 1987, pp. 1281-1286--New York, H. Weaver et al.
"Logic-Family & Memory-Cell Designs Providing abrupt Voltage Transitions & High Noise Margins" Proceedings of the 1987 Bipolar Circuits & Technology Meeting.
"DMSP Dosimetry Data: A Space Measurement and Mapping of Upset Causing Phenomena", E. G. Gussenhower, et al., IEEE Trans. Nuclear Science, vol. NS-34, pp. 1251-1255 (1987).
"AN SEU Tolerant Memory Cell Derived from Fundamental Studies of SEU Mechanisms in SRAM", H. T. Weaver, et al., IEEE Trans. Nuclear Science, vol. NS-34, pp. 1281-1286 (1987).
"Alpha Particle Induced Soft Errors in Dynamic Memories", T. C. May, et al., IEEE Trans, Electronic Devices, vol. ED-26, p. 2 (1979).

Affiliated with

Also associated with

Rating

Memory cell with capacitance for single event upset protection does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory cell with capacitance for single event upset protection, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory cell with capacitance for single event upset protection will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1532051