Memory cell with capacitance for single event upset protection

Details Memory cell with capacitance for single event upset protection Memory cell with capacitance for single event upset protection

1995-05-03

1999-06-29

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257379, 257904, H01L 27108

Patent

active

059172126

ABSTRACT:
A compact capacitor for use in a small memory cell in high density memories is disclosed. Such a capacitor in the cross-coupling of cross-coupled inverters in the memory cell improves single event upset hardness. The subject capacitor in its preferred embodiment is a MOS capacitor with both n+ and p+ connections to the capacitor channel so as to maintain a relatively high capacitance for both positive and negative capacitor gate voltages.

REFERENCES:
patent: 5083184 (1992-01-01), Eguchi
patent: 5204990 (1993-04-01), Blake et al.

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