Memory cell with a plurality of pass gates

Static information storage and retrieval – Read/write circuit – Including specified plural element logic arrangement

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365154, G11C 700

Patent

active

049107127

ABSTRACT:
Disclosed is a memory cell which includes a plurality of pass gates in the read word and write word lines. The pass gates are connected in series and each pass gate is controlled by a separate line, namely, by a write word line or a read word line. By use of two or more pass gates in this manner, logical functions, such as logical AND functions are performed within the memory cell.

REFERENCES:
patent: 4447891 (1984-05-01), Kadota

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