Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-02-14
2006-02-14
Smith, Bradley K. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S537000, C257S295000
Reexamination Certificate
active
06998698
ABSTRACT:
The present invention provides a memory cell having a variable resistor as a memory element, and also provides a memory device comprising the memory cells. The variable resistor is made of a thin-film material (for example, PCMO) or the like having a perovskite structure. So the memory cell can operate at a low voltage and can be highly integrated. The memory cell MC is formed of a combination of a current controlling device and a variable resistor. A field-effect transistor, diode or bipolar transistor is used as the current controlling device. The current controlling device is connected in series with the current path of the variable resistor so as to control a current flowing through the variable resistor.
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Hamaguchi Koji
Inoue Koji
Sharp Kabushiki Kaisha
Smith Bradley K.
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