Memory cell, wafer, semiconductor component with memory cell...

Details Memory cell, wafer, semiconductor component with memory cell... Memory cell, wafer, semiconductor component with memory cell...

2005-04-05

2005-04-05

Guerrero, Maria (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S300000, C257S302000, C257S303000, C257S304000, C257S305000

Reexamination Certificate

active

06876026

ABSTRACT:
The invention relates to a DRAM memory cell having a trench filled with conductive material connected to a selection transistor by a connection having a vertical insulation collar arranged perpendicularly to a layer sequence of the memory cell. The vertical insulation collar is connected to a lateral insulation collar of the trench. This lateral insulation collar essentially extends perpendicular to the vertical insulation collar or is arranged laterally with respect to the vertical insulation collar. It is thus possible to provide a memory cell, a wafer and a semiconductor component that have a high integration density and a sufficient dielectric strength, and that efficiently suppress parasitic transistors. A method for fabricating a lateral insulating collar for a memory cell is also described.

REFERENCES:
patent: 5770484 (1998-06-01), Kleinhenz
patent: 6004844 (1999-12-01), Alsmeier et al.
patent: 6027494 (2000-02-01), Frey
patent: 6190988 (2001-02-01), Furukawa et al.
patent: 6265742 (2001-07-01), Gruening et al.
patent: 6310375 (2001-10-01), Schrems
patent: 6329703 (2001-12-01), Schrems et al.
patent: 6335247 (2002-01-01), Tews et al.
patent: 6437381 (2002-08-01), Gruening et al.
patent: 6541334 (2003-04-01), Luetzen et al.
patent: 6638814 (2003-10-01), Kieslich et al.
patent: 20020137278 (2002-09-01), Temmler et al.
patent: 20020182819 (2002-12-01), Schrems et al.
patent: 20030057483 (2003-03-01), Bronner et al.
patent: 20030080346 (2003-05-01), Weis
patent: 100 30 696 (2002-01-01), None
patent: 100 45 694 (2002-04-01), None
patent: WO 0117019 (2001-03-01), None

Affiliated with

Also associated with

Rating

Memory cell, wafer, semiconductor component with memory cell... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory cell, wafer, semiconductor component with memory cell..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory cell, wafer, semiconductor component with memory cell... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3372440