Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-27
2005-09-27
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000
Reexamination Certificate
active
06949783
ABSTRACT:
A memory cell transistor of a DRAM device is provided. A gate stack pattern is formed on a semiconductor substrate. A DC node and a BC node are formed substantially under lateral sides of the gate stack pattern in the semiconductor substrate. The DC node and the BC node are being electrically connected to a bit line and a storage electrode of a capacitor respectively. A first source/drain junction region is formed under the DC node and a second source/drain junction region is formed under the BC node. The first source/drain junction region has a profile which is different from that of the second source/drain junction region.
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Eckert George
F. Chau & Associates LLC
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