Memory cell that employs a selectively deposited reversible...

Details Memory cell that employs a selectively deposited reversible... Memory cell that employs a selectively deposited reversible...

2007-06-29

2010-12-07

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S141000, C438S238000, C438S381000, C257SE21170, C257SE21229, C257SE21334, C257SE21352, C257SE21361, C257SE21372

Reexamination Certificate

active

07846785

ABSTRACT:
In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a diode above the first conductor; (3) forming a reversible resistance-switching element above the first conductor using a selective deposition process; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.

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