Memory cell testing feature

Details Memory cell testing feature Memory cell testing feature

2006-09-19

2006-09-19

Lam, David (Department: 2827)

Static information storage and retrieval

Read/write circuit

C365S203000, C365S204000

Reexamination Certificate

active

07110303

ABSTRACT:
An electronic memory device includes at least one memory cell, a write circuit that defines an output node and mediates a discharge associated with a write operation flowing to the output node, and a write strength selection circuit that modifies at least one characteristic of the discharge. A method for testing data retention of an electronic memory device includes providing a write circuit, storing a value in at least one memory cell of the memory device, directing a weak write operation to the at least one memory cell, and sensing the memory cell to determine if the stored value changed in response to the weak write operation.

REFERENCES:
patent: 5559745 (1996-09-01), Banik et al.
patent: 5920517 (1999-07-01), Wendell
patent: 5930185 (1999-07-01), Wendell
patent: 6243297 (2001-06-01), Nagatomo
patent: 6363500 (2002-03-01), Hamada
patent: 6657886 (2003-12-01), Adams et al.
patent: 6807124 (2004-10-01), Tsuda et al.
“Data Retention System”, IBM Technical Disclosure Bulletin, May 1975, pp. 1 2.
“Checking Random Access Memory”, IBM Technical Disclosure Bulletin, Mar. 1978, pp. 1-2.
Ding-Ming Kwai et al., “Detection of SRAM Cell Stability by Lowering Array Supply Voltage”, Proceedings of the 9thAsian Test Symposium, 2000 IEEE.
Anne Meixner et al., “Weak Write Test Mode: An SRAM Cell Stability Design For Test”, pp. 309-318, IEEE 1996.

Affiliated with

Also associated with

Rating

Memory cell testing feature does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory cell testing feature, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory cell testing feature will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3611656