Memory cell structure in a magnetic random access memory and a m

Details Memory cell structure in a magnetic random access memory and a m Memory cell structure in a magnetic random access memory and a m

1996-07-02

1998-03-24

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365171, 365 97, G11C 1100

Patent

active

057320160

ABSTRACT:
A magnetic random access memory (MRAM) cell structure (10) with a portion of giant magnetoresistive (GMR) material (11), around which single or multiple word line (12) is wound, is provided. Magnetic field generated by word current (13, 14) superimposed in portion of GMR material (11) so that a total strength of magnetic field increases proportionally. The same word current is passed through the portion of GMR material (11) multiple times, thus producing equivalent word field by many times as large word current in a conventional MRAM cell.

REFERENCES:
patent: 4455626 (1984-06-01), Lutes
patent: 5396455 (1995-03-01), Brady et al.
patent: 5448515 (1995-09-01), Fukami et al.
patent: 5587943 (1996-12-01), Torok et al.
patent: 5640343 (1997-06-01), Gallagher et al.

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