Memory cell structure for semiconductor device and dynamic semic

Details Memory cell structure for semiconductor device and dynamic semic Memory cell structure for semiconductor device and dynamic semic

1995-02-22

1996-07-02

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Capacitors

365174, 365187, 257303, 257306, 257307, G11C 700

Patent

active

055329560

ABSTRACT:
A memory cell structure for a semiconductor device includes a capacitor for storing electric charge, a first transistor for controlling storage and release of charge in the capacitor, and a second transistor interposed in a conduction path which connects the capacitor and the first transistor to each other. The second transistor serves as a cut-off transistor for interrupting the electrical connection between a charge storing capacitor and the first transistor when the capacitor is in the charged state, to thereby prevent effectively the charge from leaking by way of the source region of the first transistor. A dynamic semiconductor memory device includes a memory cell array having a plurality of memory cells of this.

REFERENCES:
patent: 4198694 (1980-04-01), Eaton, Jr. et al.
patent: 4247919 (1981-01-01), White, Jr. et al.
patent: 4651306 (1987-03-01), Yanagisawa

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