Memory cell structure fabricated with improved fabrication proce

Details Memory cell structure fabricated with improved fabrication proce Memory cell structure fabricated with improved fabrication proce

1996-01-17

1998-09-22

Wallace, Valencia Martin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257316, 257317, 257318, 257320, 437 43, 437 52, H01L 29788

Patent

active

058118527

ABSTRACT:
This invention discloses a programmable read-only-memory (PROM). The PROM is formed and supported on a substrate. The PROM includes a transistor region in the substrate including a source region, a drain region and a floating gate region disposed between the drain region and the source region. The PROM further includes a floating gate formed on top of the floating gate region with a single poly layer on the substrate. The PROM further includes a floating gate extension region disposed near the transistor region, the floating gate extension region is connected with the floating gate region. The PROM further includes a control gate formed on the substrate near the floating gate extension region opposite the transistor region whereby a charge state of the floating gate extension region is controlled by the control gate.

REFERENCES:
patent: 4616245 (1986-10-01), Topich et al.
patent: 5223731 (1993-06-01), Lee

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