Memory cell structure and method for fabrication thereof

Details Memory cell structure and method for fabrication thereof Memory cell structure and method for fabrication thereof

2011-08-16

2011-08-16

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S244000, C438S387000, C257SE27098, C257SE21008, C257S903000

Reexamination Certificate

active

07999300

ABSTRACT:
A memory cell includes a substrate, an access transistor and a storage capacitor. The access transistor comprising a gate stack disposed on the substrate, and a first and second diffusion region located on a first and second opposing sides of the gate stack. The storage capacitor comprises a first capacitor plate comprising a portion embedded within the substrate below the first diffusion region, a second capacitor plate and a capacitor dielectric sandwiched between the embedded portion of the first capacitor plate. At least a portion of the first diffusion region forms the second capacitor plate.

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