Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2005-03-08
2005-03-08
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S173000, C365S158000
Reexamination Certificate
active
06865108
ABSTRACT:
A data storage device that includes a memory cell string. The memory cell string includes a first memory cell and a second memory cell. The device also includes a circuit coupled to a node between the first memory cell and a second memory cell. The circuit is configured to detect a voltage change at the node in response to a voltage being provided to the memory cell string and the first memory cell being written to a first state.
REFERENCES:
patent: 6169686 (2001-01-01), Brug et al.
patent: 6259644 (2001-07-01), Tran et al.
patent: 6388917 (2002-05-01), Hoffmann et al.
patent: 6487109 (2002-11-01), Thewes et al.
patent: 6522576 (2003-02-01), Lu et al.
patent: 6567297 (2003-05-01), Baker
patent: 6741490 (2004-05-01), Baker
patent: 6754097 (2004-06-01), Sharma et al.
patent: 20020101758 (2002-08-01), Baker
patent: 20030039162 (2003-02-01), Baker
“Nonvolatile RAM based on Magnetic Tunnel Junction Elements” by M. Durlam et al. 2000 IEEE International Solid-State Circuits Conference 07803-5853-8/00, Motorola Labs, Physical Sciences Research Labs, Tempe, AZ, Section TA 7.3.
“A 10ns Read and Write Non-volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell” by Roy Scheuerlein et al. 2000 IEEE International Solid-State Circuits Conference 07803-5853-8/00, IBM Research Almaden Research Center, San Jose, CA, Section TA 7.2.
“Offset Compensating Bit-Line Sensing Scheme for High Density DRAM's” by Yohi Watanabe et al., IEE Jurnal of Solid-State Circuits, vol. 29, No. 1, Jan. 1994.
Champion Corbin L.
Pemer Frederick A.
Smith Kenneth K.
Wyatt Stewart R.
Hewlett--Packard Development Company, L.P.
Phung Anh
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