Memory cell sensing with low noise generation

Details Memory cell sensing with low noise generation Memory cell sensing with low noise generation

2007-02-27

2007-02-27

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Read/write circuit

Noise suppression

C365S185080, C365S220000, C365S230030, C365S233100, C703S013000, C703S014000, C703S019000, C703S021000, C703S022000, C711S167000

Reexamination Certificate

active

11029916

ABSTRACT:
Various methods, apparatuses and systems in which a memory uses a noise reduction circuit to sense groups of memory cells. The memory has a plurality of memory cells organized into groups of memory cells. The noise reduction circuit performs a sense operation on a first group of memory cells at the substantially the same time. The noise reduction circuit performs a sense operation on a second group of memory cells at substantially the same time. The noise reduction circuit has timing circuitry to sense the second group of memory cells after the sense of the first group initiates but prior to the completion of the sense operation on the first group of memory cells.

REFERENCES:
patent: 4375086 (1983-02-01), Van Velthoven
patent: 4467457 (1984-08-01), Iwahashi et al.
patent: 4884241 (1989-11-01), Tanaka et al.
patent: 4951257 (1990-08-01), Imamiya et al.
patent: 4970691 (1990-11-01), Atsumi et al.
patent: 5220527 (1993-06-01), Ohsawa
patent: 5251171 (1993-10-01), Yamauchi
patent: 5267214 (1993-11-01), Fujishima et al.
patent: 5299162 (1994-03-01), Kim et al.
patent: 5331597 (1994-07-01), Tanaka
patent: 5430670 (1995-07-01), Rosenthal
patent: 5668752 (1997-09-01), Hashimoto
patent: 5732022 (1998-03-01), Kato et al.
patent: 5761121 (1998-06-01), Chang
patent: 5768186 (1998-06-01), Ma
patent: 5781489 (1998-07-01), Okamoto
patent: 5793694 (1998-08-01), Akiba et al.
patent: 5801076 (1998-09-01), Ghneim et al.
patent: 5805013 (1998-09-01), Ghneim et al.
patent: 5808953 (1998-09-01), Kim et al.
patent: 5854114 (1998-12-01), Li et al.
patent: 5885870 (1999-03-01), Maiti et al.
patent: 5973975 (1999-10-01), Raad
patent: 6018477 (2000-01-01), Wang
patent: 6061273 (2000-05-01), Pascucci
patent: 6064105 (2000-05-01), Li et al.
patent: 6069382 (2000-05-01), Rahim
patent: 6084820 (2000-07-01), Raszka
patent: 6094394 (2000-07-01), La Rosa
patent: 6144230 (2000-11-01), Kim
patent: 6324097 (2001-11-01), Chen et al.
patent: 6330186 (2001-12-01), Tanaka
patent: 6337808 (2002-01-01), Forbes
patent: 6374205 (2002-04-01), Kuribayashi et al.
patent: 6392957 (2002-05-01), Shubat et al.
patent: 6407946 (2002-06-01), Maruyama et al.
patent: 6407956 (2002-06-01), Ooishi
patent: 6417728 (2002-07-01), Baschirotto et al.
patent: 6438051 (2002-08-01), Fifield et al.
patent: 6445614 (2002-09-01), Tsai et al.
patent: 6473356 (2002-10-01), Raszka
patent: 6597626 (2003-07-01), Hirabayashi
patent: 6597629 (2003-07-01), Raszka et al.
patent: 6741497 (2004-05-01), Roohparvar et al.
patent: 6788574 (2004-09-01), Han et al.
patent: 6842375 (2005-01-01), Raszka
patent: 6850446 (2005-02-01), Raszka et al.
patent: 6992938 (2006-01-01), Shubat et al.
patent: 2001/0026474 (2001-10-01), Fujima et al.
patent: 2002/0095560 (2002-07-01), Barth et al.
McPartland et al., “1.25 Volt, Low Cost, Embedded FLASH Memory for Low Density Applications”, 2000 Symposium on VLSI Circuits Digest of Technical Papers, pp. 158-161.
Simon J. Lovett, “The Nonvolatile Cell Hidden in Standard CMOS Logic Technologies”, IEEE Transactions on Electron Devices, vol. 48, No. 5, May 2001, pp. 1017-1018.
Ohsaki et al., “A Single Polysilicon Wafer EEPROM Cell Structure for Use in Standard CMOS Processes”, IEEE Journal of Solid-State Circuits, vol. 29*, No. 3, Mar. 1994, pp. 311-316.

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