Memory cell, semiconductor memory device, and method of...

Details Memory cell, semiconductor memory device, and method of... Memory cell, semiconductor memory device, and method of...

2006-06-26

2009-10-13

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C257S529000, C257SE23149, C365S158000

Reexamination Certificate

active

07602026

ABSTRACT:
A memory cell in a semiconductor memory device comprises a variable resistor element configured so that a variable resistor body is sandwiched between a first electrode and a second electrode, and a transistor element capable of controlling a flow of current in the variable resistor element, wherein the transistor element and the variable resistor element are placed one over the other along a direction in which the first electrode, the variable resistor body, and the second electrode of the variable resistor element are layered, and one of the first electrode and the second electrode of the variable resistor element is connected to one electrode of the transistor element.

REFERENCES:
patent: 6204139 (2001-03-01), Liu et al.
patent: 6911360 (2005-06-01), Li et al.
patent: 2004/0170052 (2004-09-01), Inui
patent: 2005/0270821 (2005-12-01), Nakano
Liu et al., “Electric-pulse-induced reversible resistance change effect in magnetoresistive films”, Applied Physics Letters, vol. 76, No. 19, pp. 2749-2751, May 8, 2000.

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