Memory cell of nonvolatile semiconductor memory

Details Memory cell of nonvolatile semiconductor memory Memory cell of nonvolatile semiconductor memory

2008-06-19

2010-11-30

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C257S410000, C257SE21422, C257SE21625, C257SE21675

Reexamination Certificate

active

07842996

ABSTRACT:
A memory cell of a nonvolatile semiconductor memory includes a semiconductor region, source/drain areas arranged separately from each other in the semiconductor region, a tunnel insulating film arranged on a channel region between the diffusion areas, a floating gate electrode arranged on the tunnel insulating film, an inter-electrode insulator arranged on the floating gate electrode, and a control gate electrode arranged on the inter-electrode insulator. The inter-electrode insulator includes lanthanoid-based metal Ln, aluminum Al, and oxygen O, and a composition ratio Ln/(Al+Ln) between the lanthanoid-based metal and the aluminum takes a value within the range of 0.33 to 0.39.

REFERENCES:
patent: 6770923 (2004-08-01), Nguyen et al.
patent: 2004/0164357 (2004-08-01), Ahn et al.
patent: 2005/0242387 (2005-11-01), Forbes
patent: 2005/0275011 (2005-12-01), Forbes
patent: 2005/0277243 (2005-12-01), Forbes
patent: 2006/0046522 (2006-03-01), Ahn et al.
patent: 2006/0284244 (2006-12-01), Forbes et al.
patent: 2007/0132010 (2007-06-01), Bhattacharyya
patent: 2008/0121979 (2008-05-01), Nishikawa et al.
patent: 2008/0271990 (2008-11-01), Ino et al.
patent: 2009/0004801 (2009-01-01), Ahn et al.
patent: 2009/0057750 (2009-03-01), Takashima et al.
patent: 2009/0096008 (2009-04-01), Kim et al.
patent: 2009/0179244 (2009-07-01), Ono
patent: 2001-298099 (2001-10-01), None
patent: 2006-203200 (2006-08-01), None
Dong Li, Ai, et. al., “Characteristics of LaAIO3 gate Dielectrics on Si grown by metalorganic chemical vapor deposition”, Appl. Phys. Letters, vol. 83, No. 17, Oct. 27, 2003, pp. 3540-3542.
U.S. Appl. No. 12/234,197, filed Sep. 19, 2008, Shingu, et al.

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