Memory cell of non-volatile semiconductor memory device

Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit

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365226, 36518518, G11C 700

Patent

active

060580518

ABSTRACT:
The current paths of a plurality of floating gate type MOSFETs are series-connected to form a series circuit. The series circuit is connected at one end to receive a reference voltage, and is connected to data programming and readout circuit. In the data programming mode, electrons are discharged from the floating gate to the drain of the MOSFET or holes are injected into the drain into the floating gate. The data readout operation is effected by checking whether current flows from the other end to the one end of the series circuit or not.

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