Memory cell of a resistive semiconductor memory device, a...

Details Memory cell of a resistive semiconductor memory device, a... Memory cell of a resistive semiconductor memory device, a...

2008-01-17

2010-11-30

Yoha, Connie C (Department: 2827)

Static information storage and retrieval

Format or disposition of elements

C365S105000, C365S175000, C365S243000, C365S063000, C365S185050

Reexamination Certificate

active

07843715

ABSTRACT:
A memory cell of a resistive semiconductor memory device, a resistive semiconductor memory device having a three-dimensional stack structure, and related methods are provided. The memory cell of a resistive semiconductor memory device includes a twin cell, wherein the twin cell stores data values representing one bit of data. The twin cell includes a main unit cell connected to a main bit line and a word line, and a sub unit cell connected to a sub bit line and the word line. Also, the main unit cell includes a first variable resistor and a first diode, and the sub unit cell includes a second variable resistor and a second diode.

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