Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2004-03-31
2008-10-14
Yoha, Connie C (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S209000
Reexamination Certificate
active
07436697
ABSTRACT:
A memory cell having a configuration completely different from that of a memory cell of a conventional memory and having various excellent characteristics, and also a method for manufacturing the same, are provided. A memory having various excellent characteristics is provided as well by use of the memory cell. Furthermore, a method for recording/reading information in/from the memory is provided. The memory cell includes a memory medium for holding information, a controlling part for recording information in the memory medium, and a detecting element for reading information from the memory medium, where the detecting element is provided independently of the memory medium. More specifically, for example, the memory medium is a magnetic device, the controlling part includes a first magnetic field generating part for applying a magnetic field to the magnetic device so as to change a magnetization state of the magnetic device, and the detecting element is arranged in the vicinity of the magnetic device and has a magnetoelectric converting part whose electric characteristics vary in accordance with the magnetization state of the magnetic device.
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European Search Report from the corresponding EP 04 72 4761, mailed May 7, 2007.
Gotoh Yasuhiro
Murakami Motoyoshi
Hamre Schumann Mueller & Larson P.C.
Matsushita Electric - Industrial Co., Ltd.
Yoha Connie C
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