Memory cell, memory circuit block, data writing method and...

Details Memory cell, memory circuit block, data writing method and... Memory cell, memory circuit block, data writing method and...

2005-01-11

2005-01-11

Nelms, David (Department: 2818)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S158000, C365S065000, C365S117000, C438S003000

Reexamination Certificate

active

06842361

ABSTRACT:
An object of the present invention is to provide a memory cell, a memory circuit block, a data writing method, and a data reading method which realize a reduction in the number of metal layers, cost, and the chip size and an increase of production yields and product reliability. A memory cell12including a metal line16crossing a bit line14without contact therewith and a second conductive structure24connecting the metal line16and a switching element20is disclosed. A write driver circuit26for driving a write current through the metal line16and a ground28are connected to the metal line16through a switch30for selecting the circuit26or the ground28.

REFERENCES:
patent: 5793697 (1998-08-01), Scheuerlein
patent: 5991193 (1999-11-01), Gallagher et al.
patent: 6005800 (1999-12-01), Koch et al.
patent: 6034887 (2000-03-01), Gupta et al.
patent: 6130835 (2000-10-01), Scheuerlein
patent: 6269018 (2001-07-01), Monsma et al.
patent: 6324093 (2001-11-01), Perner et al.
patent: 6349054 (2002-02-01), Hidaka
patent: 20010038548 (2001-11-01), Perner et al.
patent: 20010038554 (2001-11-01), Takata et al.
patent: 20020036918 (2002-03-01), Hidaka
patent: 20020044481 (2002-04-01), Hidaka
patent: 20030123282 (2003-07-01), Nickel et al.
patent: 20040047196 (2004-03-01), Hidaka
Kouichi Yamada et al., “A Novel Sensing Scheme for a MRAM with a 5% MR Ratio,” 2001 Symposium on VLSI Circuits Digest of Technical Papers, (Kyoto, Japan, Jun. 14-16, 2001).

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