Memory cell, memory cell arrangement and method for the...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S318000, C257SE29129, C438S257000

Reexamination Certificate

active

11197803

ABSTRACT:
A memory cell, memory cell arrangement, and method for producing a memory cell arrangement is described where electric charge carriers can be introduced from a trench structure, which delivers charge carriers, into a charge storage area by applying a predefined electrical potential to the cell. The memory cell provides for programming with a reduced energy requirement

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patent: 0073 370 (1983-03-01), None

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