Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-13
2007-02-13
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S318000, C257SE29129, C438S257000
Reexamination Certificate
active
11197803
ABSTRACT:
A memory cell, memory cell arrangement, and method for producing a memory cell arrangement is described where electric charge carriers can be introduced from a trench structure, which delivers charge carriers, into a charge storage area by applying a predefined electrical potential to the cell. The memory cell provides for programming with a reduced energy requirement
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Infineon - Technologies AG
Liu Benjamin Tzu-Hung
Tran Minhloan
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