Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-11-01
2005-11-01
Ho, Hoai (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S173000, C365S175000, C365S177000, C365S179000, C365S180000, C365S055000, C365S072000, C365S213000
Reexamination Certificate
active
06961262
ABSTRACT:
Device and method for memory cell isolation. The memory cell includes a resistive component, such as a magnetic random access memory (MRAM) cell, and an isolation component, such as a four-layer diode. The memory cell may be included in a memory array. The method includes rapidly applying a forward bias across the isolation element to activate the isolation element.
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Hewlett--Packard Development Company, L.P.
Ho Hoai
Pham Ly Duy
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