Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2011-06-07
2011-06-07
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S189140, C257S421000, C257SE29323, C977S700000
Reexamination Certificate
active
07957182
ABSTRACT:
A magnetic cell structure including a nonmagnetic filament contact, and methods of fabricating the structure are provided. The magnetic cell structure includes a free layer, a pinned layer, an insulative layer between the free and pinned layers, and a nonmagnetic filament contact in the insulative layer which electrically connects the free and pinned layers. The nonmagnetic filament contact is formed from a nonmagnetic source layer, also between the free and pinned layers. The filament contact directs a programming current through the magnetic cell structure such that the cross sectional area of the programming current in the free layer is less than the cross section of the structure. The decrease in the cross sectional area of the programming current in the free layer enables a lower programming current to reach a critical switching current density in the free layer and switch the magnetization of the free layer, programming the magnetic cell.
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Ozatay et al. (Applied Phisics Letters, 2006, “Spin transfer by nonuniform current injection into a nanomagnet”).
Liu Jun
Sandhu Gurtej
Fletcher Yoder
Hoang Huan
Micro)n Technology, Inc.
Norman James G
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