Memory cell having improved write stability

Details Memory cell having improved write stability Memory cell having improved write stability

2007-12-31

2010-02-09

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S230050

Reexamination Certificate

active

07660150

ABSTRACT:
A method is provided for writing to a memory cell having a read access circuit that is separate and isolatable from a write access circuit. The method comprises providing a logic state to be written to the memory cell onto a write bit line coupled to the memory cell through the write access circuit, changing a write word line that controls the write access circuit from a deactivated low voltage state to an activated high voltage state, and changing a read word line that controls the read access circuit from an activated low voltage state to a deactivated high voltage state, wherein the change in voltage on the read word line provides a voltage boost to the voltage on the write word line caused by the electrical coupling between the read word line and the write word line to provide write assist to the memory cell during a write operation.

REFERENCES:
patent: 7106620 (2006-09-01), Chang et al.
patent: 7400523 (2008-07-01), Houston
patent: 7440313 (2008-10-01), Abein et al.
patent: 2008/0192527 (2008-08-01), Yabe

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