Memory cell having improved interconnect

Details Memory cell having improved interconnect Memory cell having improved interconnect

2005-12-27

2005-12-27

Trinh, Michael (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S297000, C257S298000, C257S300000, C257S306000, C257S311000, C257S906000

Reexamination Certificate

active

06979849

ABSTRACT:
A memory cell having improved interconnect. Specifically, a dynamic random access memory (DRAM) based content addressable (CAM) memory cell is provided. The lower cell plate of the storage capacitor is implemented to provide an interconnect for the access transistor and the CAM portion of the memory cell. Conductive plugs are coupled to each of the transistors and coupled directly to the lower cell plate of the capacitor.

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