Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-12
2009-11-03
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S297000, C257S298000, C257S299000, C257S300000, C257S532000, C257SE27016, C257SE27017, C257SE27071, C257SE27093
Reexamination Certificate
active
07612397
ABSTRACT:
A nonvolatile memory cell that can be mounted in a CMOS manufacturing process, and is capable of implementing high level of programming, reading and erasing ability. The memory cell is configured by a MOS transistor including two N-type first impurity diffusion layers formed separately on a P-type semiconductor substrate, and a first gate electrode formed above a first cannel region sandwiched by both diffusion layers through a first gate insulation film, a first capacitor comprising P-type second impurity diffusion layers formed on a well, and a second gate electrode formed above the diffusion layer through a second gate insulation film, and a second capacitor comprising the well adjacent to the second impurity diffusion layer, and a third gate electrode formed above the well through a third gate insulation film, wherein a different voltage can be applied to each of the capacitors.
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Ueda Naoki
Yamauchi Yoshimitsu
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
Soward Ida M
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