Memory cell having active regions without N+ implants

Details Memory cell having active regions without N+ implants Memory cell having active regions without N+ implants

1996-05-22

1998-01-20

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257393, 257401, 257903, 257904, H01L 2976, H01L 2711

Patent

active

057104492

ABSTRACT:
Lightly doped active regions in a semiconductor structure reduce occurrences of pipeline defects. The light doped active region are typically employed where performance is not adversely affected. For example, in memory cells, pass transistors have lightly doped drains which directly connect to bit lines. A pass transistor of this type can have the source more heavily doped than the drain. Alternatively, drains and sources of pass transistors are lightly doped. Drains of pull-down transistors can also be lightly doped. The difference in doping of active regions does not increase fabrication processing steps because conventionally active regions are formed by two doping steps to create a lightly doped portions adjacent gates where field strength is highest. The invention changes such processes by covering the desired lightly active regions with the mask used during a second doping process.

REFERENCES:
patent: 5489790 (1996-02-01), Lage
Belgal et al., "A New Mechanism of Pipeline Defect Formation in CMOS Devices", IEEE/IRPS, 1991 pp. 399-404 no month.
Wang et al., "Pipeline Defects in CMOS Mosfet Devices Caused by SWAMI Isolation", IEEE/IRPS, 1992, pp. 85-90 no month.

Affiliated with

Also associated with

Rating

Memory cell having active regions without N+ implants does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory cell having active regions without N+ implants, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory cell having active regions without N+ implants will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-727967