Memory cell having a super supply voltage

Details Memory cell having a super supply voltage Memory cell having a super supply voltage

1993-09-30

1995-01-03

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

Testing

365154, 365156, 365226, 371 211, 371 214, G11C 2900

Patent

active

053792602

ABSTRACT:
According to the present invention, a static random access memory (SRAM) cell which is normally supplied with a nominal supply voltage under normal operating conditions, may be supplied with a super supply voltage so that tests requiring high voltages and increased current levels, such as diagnostic and reliability "stress" tests may be performed. The super supply voltage is greater in magnitude than the nominal supply voltage, and may range from approximately 7 volts to 13 volts for SRAM cells requiring a positive voltage supply. The super supply voltage level may be controlled by a test mode or by a bond pad using existing power supply circuitry.

REFERENCES:
patent: 4504929 (1985-03-01), Takemae
patent: 4858182 (1989-08-01), Pang
patent: 5005068 (1991-04-01), Ikeda
patent: 5079744 (1992-01-01), Tobita
patent: 5132929 (1992-07-01), Ochii
patent: 5159571 (1992-10-01), Ito

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