Memory cell having a second transistor for holding a charge...

Details Memory cell having a second transistor for holding a charge... Memory cell having a second transistor for holding a charge...

2005-09-06

2005-09-06

Chen, Jack (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

06940115

ABSTRACT:
A memory cell has a transistor, a capacitor, and a second transistor that is formed as a parasitic field-effect transistor. The parasitic field-effect transistor is provided in order to produce an electrically conductive connection between a voltage source and the inner electrode of the capacitor. Stabilization of a charge state of the capacitor is automatically achieved in this way.

REFERENCES:
patent: 4794434 (1988-12-01), Pelley, III
patent: 5041887 (1991-08-01), Kumagai et al.
patent: 5198995 (1993-03-01), Dennard et al.
patent: 5598367 (1997-01-01), Noble
patent: 0 550 894 (1993-07-01), None
patent: 0 822 599 (1998-02-01), None

Affiliated with

Also associated with

Rating

Memory cell having a second transistor for holding a charge... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory cell having a second transistor for holding a charge..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory cell having a second transistor for holding a charge... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3424088