Memory cell fuse circuit and controlling method thereof

Details Memory cell fuse circuit and controlling method thereof Memory cell fuse circuit and controlling method thereof

2007-09-25

2009-06-23

Mai, Son L (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S096000, C365S225700

Reexamination Certificate

active

07551500

ABSTRACT:
A controlling method of a memory cell fuse circuit is provided. The memory cell fuse circuit at least includes a reference cell fuse circuit and a plurality of normal cell fuse circuit. The reference cell fuse circuit includes a reference fuse cell and each the normal cell fuse circuit includes a normal fuse cell. The controlling method includes steps of: power on read and sensing digits of the memory cell fuse circuit; detecting if any normal fuse cell is non blank as failed; programming the reference fuse cell if at least one normal fuse cell is failed until all normal fuse cells are blank; programming and reading the normal fuse cell of each the normal cell fuse circuit; and outputting data of each the normal fuse cell.

REFERENCES:
patent: 6404680 (2002-06-01), Kwon
patent: 6670843 (2003-12-01), Moench et al.
patent: 6839280 (2005-01-01), Chindalore et al.
patent: 2005/0216652 (2005-09-01), Chen
patent: 2005/0237842 (2005-10-01), Takeuchi et al.

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