Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-08-23
2011-08-23
Geyer, Scott B (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S652000, C438S658000, C438S659000, C438S674000
Reexamination Certificate
active
08003511
ABSTRACT:
Memory cell formation using ion implant isolated conductive metal oxide is disclosed, including forming a bottom electrode below unetched conductive metal oxide layer(s), forming the unetched conductive metal oxide layer(s) including depositing at least one layer of a conductive metal oxide (CMO) material (e.g., PrCaMnOX, LaSrCoOX, LaNiOX, etc.) over the bottom electrode. At least one portion of the layer of CMO is configured to act as a memory element without etching, and performing ion implantation on portions of the layer(s) of CMO to create insulating metal oxide (IMO) regions in the layer(s) of CMO. The IMO regions are positioned adjacent to electrically conductive CMO regions in the unetched layer(s) of CMO and the electrically conductive CMO regions are disposed above and in contact with the bottom electrode and form memory elements operative to store non-volatile data as a plurality of conductivity profiles (e.g., resistive states indicative of stored data).
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Bornstein Jonathan
Cheung Robin
Hansen David
Longcor Steven W.
Meyer Rene
Geyer Scott B
Unity Semiconductor Corporation
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