Memory cell for use in a static random access memory

Details Memory cell for use in a static random access memory Memory cell for use in a static random access memory

1991-08-06

1993-09-07

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Flip-flop

365156, 365190, G11C 1140

Patent

active

052435555

ABSTRACT:
A memory cell for use in a SRAM improving the operating characteristics and capable of high density is described. In the its construction, the data is stored to a cell latch which includes load resistances and driving FETs, and a transmission FET is turned "ON" in case that a word line is selected and simultaneously electrically connects a bit line with the cell latch. A reading FET transmits the memorized contents of the cell latch to the transmission FET during reading operation of the memory cell and a writing FET stores the data of the bit line into the cell latch during writing operation of the memory cell. Thus, the predominant operating characteristics with respect to the threshold voltage variations among device parameters of FET can be obtained, and the breakdown phenomenon of the stored data can be prevented by separating the cell latch and the bit line in the memory cell.

REFERENCES:
patent: 4128773 (1978-12-01), Troutman et al.
patent: 4404657 (1983-09-01), Furuyama et al.
patent: 4575821 (1986-03-01), Eden et al.
patent: 4782467 (1988-11-01), Belt et al.
patent: 4995000 (1991-02-01), Terrell

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