Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-12-23
2000-08-01
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257315, 257317, 257321, H01L 29788
Patent
active
06097057&
ABSTRACT:
A memory cell for devices of the EEPROM type, formed in a portion of a semiconductor material substrate having a first conductivity type. The memory cell includes source and drain regions having a second conductivity type and extending at the sides of a gate oxide region which includes a thin tunnel oxide region. The memory cell also includes a region of electric continuity having the second conductivity type, being formed laterally and beneath the thin tunnel oxide region, and partly overlapping the drain region, and a channel region extending between the region of electric continuity and the source region. The memory cell further includes an implanted region having the first conductivity type and being formed laterally and beneath the gate oxide region and incorporating the channel region.
REFERENCES:
patent: Re35094 (1995-11-01), Wu et al.
patent: 3914857 (1975-10-01), Goser et al.
patent: 5081054 (1992-01-01), Wu et al.
patent: 5411904 (1995-05-01), Yamauchi et al.
patent: 5468981 (1995-11-01), Hsu
patent: 5491101 (1996-02-01), Miyamoto et al.
patent: 5501996 (1996-03-01), Yang et al.
patent: 5510284 (1996-04-01), Yamauchi
patent: 5518942 (1996-05-01), Shrivastava
patent: 5527728 (1996-06-01), Ghezzi et al.
patent: 5567632 (1996-10-01), Nakashiba et al.
patent: 5792670 (1998-08-01), Pio et al.
patent: 5877054 (1999-03-01), Yamauchi
patent: 5894146 (1999-04-01), Pio et al.
Six page article entitled An Asymmetrical Lightly Doped Source Cell for Virtual Ground High-Density EPROM's, by Kuniyoshi Yoshikawa, et al., IEEE Transactions on Electron Devices, vol. 37, No. 4, Apr. 1990.
Four page article entitled "Passivation Scheme Impact on Retention Reliability of Non Volatile Memory Cells," by R. Bottini, et al., 95 IRW Final Report, IEEE 1996.
Bottini Roberta
Cremonesi Carlo
Dalla Libera Giovanna
Vajana Bruno
Eckert II George C.
Galanthay Theodore E.
Hardy David
SGS--Thomson Microelectronics S.r.l.
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