Memory cell for EEPROM devices and corresponding fabricating...

Details Memory cell for EEPROM devices and corresponding fabricating... Memory cell for EEPROM devices and corresponding fabricating...

2000-05-22

2001-11-20

Booth, Richard (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C438S258000, C438S264000

Reexamination Certificate

active

06320219

ABSTRACT:

FIELD OF THE INVENTION
This invention relates to a memory cell for EEPROM devices, in particular devices of the FLOTOX EEPROM type, and to a CMOS process for fabricating it.
BACKGROUND OF THE INVENTION
As is known, there exists a demand from the market for EEPROM memory devices of ever larger capacity (>256 Kb), which implies a demand for physically ever smaller memory cells.
Memory devices of the FLOTOX EEPROM type are presently the most widely employed memory devices by manufacturers throughout the world. These devices, while being advantageous from several aspects, have some limitations in layout, due to their operation physics, which disallows reductions in the dimensions of the individual cells below a certain minimum. In particular, memory devices of the FLOTOX EEPROM type are formed of floating-gate memory cells with two levels of polysilicon, wherein an electric charge is stored to establish two different cell states, “written” or “erased”, which correspond to the logic states of “1” or “0”, respectively.
FIGS. 1 and 2
show the details of a FLOTOX EEPROM type of memory, indicated at
1
, which is included in a device
2
, itself formed on a semiconductor material substrate
10
having a first conductivity type, specifically of the P type. The device
2
further comprises a select transistor
3
connected in series with the cell
1
.
Referring now to
FIG. 1
, it can be seen that the substrate
10
includes a source region
11
of the cell
1
which has a second conductivity type, specifically of the N type, and a region
12
of electric continuity having the same conductivity type. This substrate also includes a drain region
13
of the cell
1
and a source region of the transistor
3
(the drain/source region
13
) having the second conductivity type. This substrate
10
further includes a drain region
14
of the transistor
3
, also with the second conductivity type. All the regions indicated at
11
-
14
are facing a surface
15
of the substrate
10
.
With further reference to
FIG. 1
, in stacked arrangement above the surface
15
are the following: a gate oxide region
18
of the cell
1
, at the sides whereof are the source
11
and drain
13
regions of the cell, the region
18
having a thin tunnel oxide region
19
formed therein; a first portion
20
of a first polycrystalline silicon (poly
1
) layer; a first portion
21
of a dielectric (interpoly) layer; and a first portion
22
of a second (poly
2
) layer comprised of polycrystalline silicon and tungsten silicide. The portions
20
and
22
form the floating gate region and control gate region, respectively, of the cell
1
.
A portion of the substrate
10
, indicated at
31
in
FIG. 1
, is included between the region
12
of electric continuity and the source region
11
of the cell
1
to form the cell channel region having a length dimension denoted by L.
It should be noted that the thin, approximately 80 Å thick, tunnel oxide region
19
is adapted to pass electric charges to the floating gate region by tunnel effect (a phenomenon also known as Fowler-Nordheim current), i.e. for programming the cell
1
.
The region
12
of electric continuity, formed laterally and beneath the thin tunnel oxide region
19
and partly overlapping the drain region
13
of the cell
1
, provides electric continuity between a region of the substrate
10
underlying the region
19
(the so-called tunnel area) and the drain region
13
.
With continued reference to
FIG. 1
, stacked on top of one another above the surface
15
are: a gate oxide region
25
of the select transistor
3
, at the sides whereof there extend the source
13
and drain
14
transistor regions; a second portion
26
of poly; a second portion
27
of the dielectric (interpoly) layer; and a second portion
28
of poly
2
. The portions
26
and
28
of the polycrystalline silicon layer are shortcircuited to a field oxide region, not shown in the drawings, outside the cell
1
. An intermediate oxide layer
30
covers the device
2
and isolates the various layers from one another.
As can be seen in
FIG. 2
, the floating gate region, portion
20
of poly, of the cell
1
is insulated and enclosed at the top and the sides by the dielectric interpoly layer
21
, preferably an ONO layer formed of a superposition of silicon Oxide-silicon Nitride-silicon Oxide, and at the bottom by the gate oxide
18
and tunnel oxide
19
regions.
Still with reference to
FIG. 2
, the region
12
of electric continuity and the channel region
31
(shown in
FIG. 1
) are bounded, laterally along their widths, by a thick field oxide layer
32
.
Shown in
FIG. 3
are the masks employed to form the memory cell
1
. In detail, the reference numeral
4
denotes a capacitive implant mask for forming the region
12
of electric continuity, and the reference numeral
5
denotes a tunnel mask for forming the region
19
.
Further in
FIG. 3
, the reference numeral
6
denotes a self-aligned etching mask (to be explained hereinafter), and the reference numeral
7
denotes a drain/source implant mask for forming the drain/source region
13
. Finally, the reference numeral
8
denotes a mask for making the drain contact D for the select transistor
3
.
The process for fabricating the memory cell
1
is a typical (two- or single-well) CMOS process.
Referring first to
FIG. 4
, and starting from the substrate
10
, the capacitive implant mask
4
is formed after growing the field oxide
32
, not shown in the Figure, to bound the active areas of the device
2
and grow a sacrificial oxide layer
39
. This mask is formed using a layer
40
of a light-sensitive material fully covering the sacrificial oxide layer
39
but for a window
41
through which the capacitive implantation (usually phosphorus for N-channel cells) will be effected to form the region
12
of electric continuity, as shown in FIG.
5
.
Referring now to
FIG. 5
, after removing the mask
4
and sacrificial oxide layer
39
, a gate oxide layer
42
is grown to form the gate oxide region
18
of the cell
1
. The tunnel mask
5
is then deposited which comprises a layer
43
of a light-sensitive material fully covering the gate oxide layer
42
but for a window
45
where the thin tunnel oxide region
19
is to be formed.
Thereafter, a dedicated etching is applied to clean the surface
15
, which results in the exposed portion of the layer
42
being etched away and the intermediate structure shown in
FIG. 5
being produced.
Using the tunnel mask
5
, the thin tunnel oxide region
19
is grown which is surrounded by the gate oxide layer
42
, as shown in FIG.
6
. The tunnel mask
5
is then removed to provide the intermediate pattern shown in FIG.
6
.
This is followed by the steps of:
depositing and doping the first (poly
1
) layer
44
of polycrystalline silicon, as shown in
FIG. 7
;
shaping layer
44
to delimit the width (along the horizontal direction in
FIGS. 1 and 3
) of the floating gate region
20
for the cell
1
;
depositing the composite ONO (dielectric interpoly
21
) layer;
back-etching the ONO layer
21
in the circuitry area of the device
2
;
depositing and doping the poly
2
layer;
self-alignment etching the poly
2
, ONO, poly
1
, and gate oxide
42
layers in the matrix, using the mask
6
, to delimit the length (along the vertical direction in
FIG. 1
) of the floating gate
20
and control gate
22
regions of the cell
1
, and simultaneously back-etching the poly
2
and poly
1
layers in the circuitry area to define the gates of transistors comprising the circuitry;
growing a protecting oxide layer (not shown because embedded within the dielectric layer
30
) over the control gate region
22
;
optionally effecting a first light drain/source implantation;
forming oxide portions, or spacers, not shown in the drawings, laterally of the floating gate
20
and control gate
22
regions; and
effecting a drain/source implantation using the mask
7
, to produce the regions
11
,
13
and
14
, and therefore, the structure shown in
FIGS. 1 and 2
.
Subsequently, the following conventional final ste

Affiliated with

Also associated with

Rating

Memory cell for EEPROM devices and corresponding fabricating... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory cell for EEPROM devices and corresponding fabricating..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory cell for EEPROM devices and corresponding fabricating... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2617974