Memory cell fabricated by floating gate structure

Details Memory cell fabricated by floating gate structure Memory cell fabricated by floating gate structure

1994-06-01

1996-07-30

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Semiconductive

365104, 365 94, 36518501, 257314, G11C 1134

Patent

active

055418767

ABSTRACT:
A memory cell and a process for making it are disclosed. The ROM code is not implanted in the floating gate for cells selected to be "off". This memory cell has a much lower threshold voltage than conventional cells and the implantation induced crystal damage is avoided.

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