Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-16
1998-03-31
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257368, 257758, 257776, 257903, 257904, 365 69, 365154, 365180, 36518507, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
057341877
ABSTRACT:
A memory cell with vertically stacked crossovers. In prior memory cells, crossover connections within the memory cell were implemented in the same device layer. This wasted valuable design space, since the crossovers were therefore required to sit side-by-side in the layout design. The present invention implements crossovers in different materials on different device layers. The crossovers may therefore be vertically stacked on top of each other, reducing the area of the memory cell.
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Bohr Mark T.
Greason Jeffrey K.
Faatz Cynthia Thomas
Intel Corporation
Saadat Mahshid D.
Wilson Allan R.
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