Memory cell comprising tunnel diodes and field effect transistor

Details Memory cell comprising tunnel diodes and field effect transistor Memory cell comprising tunnel diodes and field effect transistor

1979-11-15

1982-11-23

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Negative resistance

307286, 365175, G11C 1138

Patent

active

043608973

ABSTRACT:
A static memory cell uses a micro-tunnel diode as load to a switching circuit involving field effect transistors. Another field effect transistor circuit is used as gate for read-address and read-out. The stationary current through the tunnel diode at logic zero is kept barely above the valley current to prevent aging. Close control of two threshold levels for the transistors in the memory cell is achieved by using the same dopant distribution in their channels in conjunction with a Schottky gate and a p-n junction gate.

REFERENCES:
patent: 4242595 (1980-12-01), Lehovec
patent: 4300064 (1981-11-01), Eden
Gaensslen et al., FET Memory Cell using Schottky Diodes as Load Devices, IBM Tech. Disc. Bul., vol. 13, No. 2, 7/70, pp. 302-303.
Landler, Dynamic Schottky Storage Cell, IBM Tech. Disc. Bul., vol. 17, No. 11, 4/75, pp. 3215-3216.

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