Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-30
2009-06-02
Phung, Anh (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29019, C257SE29025, C438S294000
Reexamination Certificate
active
07541636
ABSTRACT:
A memory cell with one transistor on a floating body region isolated by its lower surface by a junction. According to the present invention, the junction is non-planar and, for example, includes a protrusion directed towards the transistor surface.
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Mazoyer Pascale
Ranica Rossella
Villaret Alexandre
Jorgenson Lisa K.
Lulis Michael
McClellan William R.
Phung Anh
STMicroelectronics Crolles SAS
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