Static information storage and retrieval – Read/write circuit – Having fuse element
Reexamination Certificate
2007-10-02
2007-10-02
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having fuse element
C365S149000, C365S129000
Reexamination Certificate
active
11356805
ABSTRACT:
Memory cells including an SRAM and an OTP memory unit that combine the advantages of both technologies and can be fabricated by standard CMOS manufacturing without additional masking. The concepts and details may be applied to and utilized in other systems requiring memory and/or employing other fabrication technologies. Among other advantages, the SRAM part of memory cells allows countless programming of the cell, which is useful, for example, during the prototyping. The OTP part is utilized to permanently program the memory cell by either using external data or the data already existing in the SRAM part of the cell. The value held by the OTP unit may also be written directly into the SRAM part of the cell.
REFERENCES:
patent: 6914842 (2005-07-01), Huang et al.
patent: 7064973 (2006-06-01), Peng et al.
Fong David
Liu Zhongshang
Luan Harry Shengwen
Peng Jack Zezhong
Wang Jianguo
KLP International Ltd.
Nguyen Dang
Nguyen Tuan T.
Perkins Coie LLP
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