Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to conductive state
Reexamination Certificate
2007-02-13
2007-02-13
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to conductive state
C438S467000, C438S600000, C438S957000, C257S530000
Reexamination Certificate
active
10954510
ABSTRACT:
A memory cell is formed of a semiconductor junction diode in series with an antifuse. The cell is programmed by rupture of the antifuse. The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide. The suicide apparently provides a template for crystallization, improving crystallinity and conductivity of the diode, and reducing the programming voltage required to program the cell. It is advantageous to reduce a dielectric layer (such as an oxide, nitride, or oxynitride) intervening between the silicon and the silicon-forming metal during the step of forming the silicide.
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Huynh Andy
Sandisk 3D LLC
Vierra Magen Marcus & DeNiro LLP
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